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- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.11028
Zusammenfassung
We experimentally investigate the miniband transport in a novel kind of superlattice fabricated by the “cleaved edge overgrowth” method. The structure represents a field effect transistor, where the channel consists of an MBE-grown superlattice perpendicular to the current flow. By means of the gate the Fermi energy can be adjusted between the bottom of the first miniband and into the minigap. We ...
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