Semiconductor nanostructures with short depletion length and stacked gates, patterned with an atomic force microscope

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11039

Heinzel, Thomas H. ; Held, R. ; Lüscher, S. ; Ensslin, Klaus ; Wegscheider, Werner

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Veröffentlichungsdatum dieses Volltextes: 30 Nov 2009 13:22

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We have investigated the electronic properties of the confining potentials obtained by oxidizing the surface of Ga[Al]As heterostructures with an atomic force microscope. From magnetotransport measurements on quantum wires at liquid-helium temperatures we find an extremely small lateral depletion length of (15±5) nm as well as a specularity of the boundary scattering above 95%. Furthermore, we ...