Influence of short-range ordering on roughness of (AlGa)As interfaces studied with cross-sectional scanning tunneling microscopy

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11051

Reusch, T. C. G. ; Wenderoth, M. ; Heinrich, A. J. ; Engel, K. J. ; Quaas, N. ; Sauthoff, K. ; Ulbrich, R. G. ; Weber, E. R. ; Uchida, K. ; Wegscheider, Werner

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Veröffentlichungsdatum dieses Volltextes: 30 Nov 2009 13:28

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Cross-sectional scanning tunneling microscopy was used to identify individual Al atoms on cleaved surfaces of two sets of (AlGa)As heterostructure samples grown with metalorganic vapor-phase epitaxy and molecular-beam epitaxy. We determined the average Al concentration profile perpendicular to the GaAs–(AlGa)As interfaces. Based on former investigations of short-range ordering in (AlGa)As bulk ...