Transport properties of quantum dots with steep walls

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11175

Fuhrer, A. ; Lüscher, S. ; Heinzel, Thomas ; Ensslin, Klaus ; Wegscheider, Werner ; Bichler, Max

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Veröffentlichungsdatum dieses Volltextes: 30 Nov 2009 13:44

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Zusammenfassung

Quantum dots are fabricated in a Ga[Al]As heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate small lateral depletion lengths. The confinement is characterized by low-temperature magnetotransport measurements, from which the dots energy spectrum is reconstructed. We find that in small dots the addition ...