Electronic properties of antidot lattices fabricated by atomic force lithography

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11191

Dorn, A. ; Sigrist, Martin ; Fuhrer, A. ; Ihn, Thomas ; Ensslin, Klaus ; Wegscheider, Werner ; Bichler, Max

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Veröffentlichungsdatum dieses Volltextes: 30 Nov 2009 14:12

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Zusammenfassung

Antidot lattices were fabricated by atomic force lithography using local oxidation. High quality finite 20×20 lattices are demonstrated with periods of 300 nm. The low-temperature magnetoresistance shows well developed commensurability oscillations as well as a quenching of the Hall effect around zero magnetic field. In addition, we find B-periodic oscillations superimposed on the classical ...