Spin polarized tunneling through single-crystal GaAs(001) barriers

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11303

Kreuzer, Sebastian ; Moser, Jürgen ; Wegscheider, Werner ; Weiss, Dieter ; Bichler, Max ; Schuh, Dieter

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Veröffentlichungsdatum dieses Volltextes: 07 Dez 2009 13:05

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Zusammenfassung

We investigate spin-dependent transport through an epitaxial GaAs(001) barrier sandwiched between polycrystalline iron films. Electron transport through the barrier is dominated by quantum mechanical tunneling, demonstrated by a nonlinear I–V characteristic, an exponential dependence of the tunneling current on the barrier thickness and the temperature dependence of the current. Though small a ...