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Spin polarized tunneling through single-crystal GaAs(001) barriers

DOI to cite this document:
Kreuzer, Sebastian ; Moser, Jürgen ; Wegscheider, Werner ; Weiss, Dieter ; Bichler, Max ; Schuh, Dieter
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Date of publication of this fulltext: 07 Dec 2009 13:05


We investigate spin-dependent transport through an epitaxial GaAs(001) barrier sandwiched between polycrystalline iron films. Electron transport through the barrier is dominated by quantum mechanical tunneling, demonstrated by a nonlinear I–V characteristic, an exponential dependence of the tunneling current on the barrier thickness and the temperature dependence of the current. Though small a ...


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