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- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.11305
Zusammenfassung
Using an atomic force microscope a ring geometry with self-aligned in-plane gates was directly written into a GaAs/AlGaAs heterostructure. Transport measurements in the open regime show only one transmitting mode and Aharonov–Bohm oscillations with more than 50% modulation are observed in the conductance. The tuning via in-plane gates allows one to study the Aharonov–Bohm effect in the whole range from the open ring to the Coulomb-blockade regime.