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- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.11316
Alternative Links zum Volltext:DOI
Zusammenfassung
A scheme to produce closely spaced high-quality one-dimensional electronic channels is presented. It is based on standard nanolithography fabrication applied to a single, wide quantum well AlGaAs/GaAs heterostructure where the spatial separation of the wire modes is given by Coulomb repulsion. The lack of a composition-induced barrier in the double layer leads to electron mobility of 5x10(6) ...
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