Degradation Analysis of InGaN Laser Diodes

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11319

Kümmler, V. ; Brüderl, G. ; Bader, S. ; Miller, S. ; Weimar, A. ; Lell, A. ; Härle, V. ; Schwarz, Ulrich ; Gmeinwieser, Nikolaus ; Wegscheider, Werner

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Veröffentlichungsdatum dieses Volltextes: 07 Dez 2009 13:26

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Zusammenfassung

The current status of InGaN-MQW-laser diodes developed at Osram OS is presented. These lasers are grown on n-conducting SiC, enabling a vertical current path, cleaved facets and excellent heat spreading. The temperature rise during cw operation is measured for different mountings. A p-side up mounted diode with thermal resistance of 18 K/W showed 143 h of cw lasing at 1 mW optical power (T = 25 ...