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Degradation Analysis of InGaN Laser Diodes

DOI to cite this document:
Kümmler, V. ; Brüderl, G. ; Bader, S. ; Miller, S. ; Weimar, A. ; Lell, A. ; Härle, V. ; Schwarz, Ulrich ; Gmeinwieser, Nikolaus ; Wegscheider, Werner
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Date of publication of this fulltext: 07 Dec 2009 13:26


The current status of InGaN-MQW-laser diodes developed at Osram OS is presented. These lasers are grown on n-conducting SiC, enabling a vertical current path, cleaved facets and excellent heat spreading. The temperature rise during cw operation is measured for different mountings. A p-side up mounted diode with thermal resistance of 18 K/W showed 143 h of cw lasing at 1 mW optical power (T = 25 ...


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