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- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.11320
Zusammenfassung
In this work we present a new method to fabricate planar Hall sensors from GaAs–AlGaAs heterojunctions, which can be used to examine the local stray field at a specific section of a micron-sized magnet. Instead of mesa etching we implanted oxygen ions with an energy of 1.5 keV which deplete the two-dimensional electron gas underneath the exposed areas but leave the wafer flat. Planar double Hall ...
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