Vertical field effect transistors realized by cleaved-edge overgrowth

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11324

Ertl, F. ; Asperger, T. ; Deutschmann, R. A. ; Wegscheider, Werner ; Bichler, Max ; Böhm, G. ; Abstreiter, Gerhard

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Veröffentlichungsdatum dieses Volltextes: 07 Dez 2009 13:29

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Zusammenfassung

We present a brief survey of vertical transistor devices fabricated by the cleaved-edge overgrowth technique. Different device types are realized using different transistor substrates grown by molecular beam epitaxy. These substrates mainly vary in the layer sequence and thickness between the source/drain contacts. Common to all designs is the vertical gate structure overgrown on a cleavage plane ...