Nonradiative relaxation times in diagonal transition Si/SiGe quantum cascade structures

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11494

Bormann, I. ; Brunner, Konrad ; Hackenbuchner, S. ; Abstreiter, Gerhard ; Schmult, Stefan ; Wegscheider, Werner

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Veröffentlichungsdatum dieses Volltextes: 15 Dez 2009 08:51

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Zusammenfassung

Here, we explore experimentally and theoretically the possibility to prolong the upper hole state nonradiative lifetime of Si/SiGe quantum cascade (QC) structures by using a spatially indirect diagonal transition between two SiGe quantum well ground states. With the recent observation of well resolved midinfrared electroluminescence from heavy hole intersubband transitions in Si/SiGe valence-band ...