Gradual facet degradation of (Al,In)GaN quantum well lasers

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11802

Kümmler, V. ; Lell, Alfred ; Härle, Volker ; Schwarz, Ulrich ; Schoedl, T. ; Wegscheider, Werner

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Veröffentlichungsdatum dieses Volltextes: 11 Jan 2010 13:04

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Zusammenfassung

In our study, III-nitride laser diodes with uncoated facets obtained by cleavage show a much faster degradation than coated ones. An increase in threshold current and drop of slope efficiency suggest increased absorption losses. Degradation experiments in different atmospheres prove the influence of the respective atmosphere and indicate the growth of an oxide film leading to increased ...