Gradual facet degradation of (Al,In)GaN quantum well lasers

DOI to cite this document:: 10.5283/epub.11802

Kümmler, V. ; Lell, Alfred ; Härle, Volker ; Schwarz, Ulrich ; Schoedl, T. ; Wegscheider, Werner

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Date of publication of this fulltext: 11 Jan 2010 13:04

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Abstract

In our study, III-nitride laser diodes with uncoated facets obtained by cleavage show a much faster degradation than coated ones. An increase in threshold current and drop of slope efficiency suggest increased absorption losses. Degradation experiments in different atmospheres prove the influence of the respective atmosphere and indicate the growth of an oxide film leading to increased ...