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Gradual facet degradation of (Al,In)GaN quantum well lasers
Kümmler, V., Lell, Alfred, Härle, Volker, Schwarz, Ulrich
, Schoedl, T. und Wegscheider, Werner
(2004)
Gradual facet degradation of (Al,In)GaN quantum well lasers.
Applied Physics Letters 84 (16), S. 2989-2991.
Veröffentlichungsdatum dieses Volltextes: 11 Jan 2010 13:04
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.11802
Zusammenfassung
In our study, III-nitride laser diodes with uncoated facets obtained by cleavage show a much faster degradation than coated ones. An increase in threshold current and drop of slope efficiency suggest increased absorption losses. Degradation experiments in different atmospheres prove the influence of the respective atmosphere and indicate the growth of an oxide film leading to increased ...
In our study, III-nitride laser diodes with uncoated facets obtained by cleavage show a much faster degradation than coated ones. An increase in threshold current and drop of slope efficiency suggest increased absorption losses. Degradation experiments in different atmospheres prove the influence of the respective atmosphere and indicate the growth of an oxide film leading to increased absorption. Because the observed degradation is insensitive to the photon density we suggest nonradiative centers, which are saturated at low photon densities, to be at the origin of degradation. No evidence for photon enhanced degradation of coated laser diodes was found. A dielectric coating efficiently protects the facets. (C) 2004 American Institute of Physics.
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Details
| Dokumentenart | Artikel | ||||
| Titel eines Journals oder einer Zeitschrift | Applied Physics Letters | ||||
| Verlag: | AMER INST PHYSICS | ||||
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| Ort der Veröffentlichung: | MELVILLE | ||||
| Band: | 84 | ||||
| Nummer des Zeitschriftenheftes oder des Kapitels: | 16 | ||||
| Seitenbereich: | S. 2989-2991 | ||||
| Datum | 19 April 2004 | ||||
| Institutionen | Physik > Institut für Experimentelle und Angewandte Physik > Entpflichtete oder im Ruhestand befindliche Professoren > Arbeitsgruppe Werner Wegscheider | ||||
| Identifikationsnummer |
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| Verwandte URLs |
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| Klassifikation |
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| Stichwörter / Keywords | DIODES; OXIDATION; | ||||
| Dewey-Dezimal-Klassifikation | 500 Naturwissenschaften und Mathematik > 530 Physik | ||||
| Status | Veröffentlicht | ||||
| Begutachtet | Unbekannt / Keine Angabe | ||||
| An der Universität Regensburg entstanden | Unbekannt / Keine Angabe | ||||
| Dokumenten-ID | 11802 |
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