Long relaxation times of holes in Si/SiGe quantum cascade structures with a diagonal intersubband transition

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11816

Bormann, I. ; Brunner, K. ; Hackenbuchner, S. ; Riedl, H. ; Schmult, Stefan ; Wegscheider, Werner ; Abstreiter, Gerhard

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Veröffentlichungsdatum dieses Volltextes: 11 Jan 2010 13:17

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In this work we investigate experimentally and theoretically the feasibility to enhance the nonradiative lifetime of the upper heavy hole state in Si/SiGe quantum cascade (QC) structures within a diagonal transition design. The problem of fast nonradiative optical phonon scattering makes it impossible to achieve population inversion with recently demonstrated Si/SiGe QC mid-infrared emitter ...