Strong charge carrier confinement in purely strain induced GaAs/InAlAs single quantum wires

DOI to cite this document:: 10.5283/epub.11827

Schuster, Robert ; Hajak, H. ; Reinwald, Matthias ; Wegscheider, Werner ; Schuh, Dieter ; Bichler, Max ; Abstreiter, Gerhard

PDF
(234kB) - Repository staff only

Date of publication of this fulltext: 11 Jan 2010 13:22

Alternative links to fulltext:DOI

Details

Indexed in

Export bibliographical data

Abstract

We report on micro-photoluminescence studies of single quantum wires which were grown by molecular beam epitaxy. Employing the cleaved edge overgrowth technique, quantum wires located in an overgrown (011) oriented GaAs quantum well originate purely from the tensile strain field of InAlAs layers grown along the [100] direction. These stressor layers are separated by 1-mum-wide AlGaAs barriers so ...