Go to content
UR Home

Strong charge carrier confinement in purely strain induced GaAs/InAlAs single quantum wires

DOI to cite this document:
Schuster, Robert ; Hajak, H. ; Reinwald, Matthias ; Wegscheider, Werner ; Schuh, Dieter ; Bichler, Max ; Abstreiter, Gerhard
(234kB) - Repository staff only
Date of publication of this fulltext: 11 Jan 2010 13:22


We report on micro-photoluminescence studies of single quantum wires which were grown by molecular beam epitaxy. Employing the cleaved edge overgrowth technique, quantum wires located in an overgrown (011) oriented GaAs quantum well originate purely from the tensile strain field of InAlAs layers grown along the [100] direction. These stressor layers are separated by 1-µm-wide AlGaAs barriers so ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons