Spin-dependent tunnelling through epitaxial GaAs(001) and (110) barriers

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11830

Zenger, Marcus ; Moser, Jürgen ; Kreuzer, Stephan ; Wegscheider, Werner ; Weiss, Dieter

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Veröffentlichungsdatum dieses Volltextes: 11 Jan 2010 13:23

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Zusammenfassung

We investigate transport through 5–10 nm thin epitaxial GaAs(001) and (110) barriers sandwiched between polycrystalline iron films. It turns out that tunnelling is the dominant transport mechanism; this is indicated by a nonlinear I–V-characteristic, an exponential dependence of the tunnelling current on the barrier thickness and the temperature dependence of the current. We observe a pronounced ...