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Fabrication of double quantum dots by combining afm and e-beam lithography

Rogge, M. C., Fühner, C., Keyser, U. F., Bichler, Max, Abstreiter, Gerhard, Wegscheider, Werner and Haug, R. J. (2004) Fabrication of double quantum dots by combining afm and e-beam lithography. Physica E Low-dimensional Systems and Nanostructures 21 (2-4), pp. 483-486.

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Abstract

In recent years several attempts have been made to fabricate coupled quantum dots as a crucial element of quantum computing devices. One important challenge is to achieve a reliable control of the interdot tunneling. For this purpose we have combined direct nanolithography by local anodic oxidation (LAO) with standard electron-beam lithography. LAO is used to produce parallel double quantum dots. ...

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Item type:Article
Date:March 2004
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
doi:10.1016/j.physe.2003.11.054DOI
Classification:
NotationType
73.21.La; 73.23.Hk; 73.40.GkPACS
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:11955
Owner only: item control page

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