Fabrication of double quantum dots by combining afm and e-beam lithography

DOI to cite this document:: 10.5283/epub.11955

Rogge, M. C. ; Fühner, C. ; Keyser, U. F. ; Bichler, Max ; Abstreiter, Gerhard ; Wegscheider, Werner ; Haug, R. J.

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Date of publication of this fulltext: 11 Jan 2010 13:31

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Abstract

In recent years several attempts have been made to fabricate coupled quantum dots as a crucial element of quantum computing devices. One important challenge is to achieve a reliable control of the interdot tunneling. For this purpose we have combined direct nanolithography by local anodic oxidation (LAO) with standard electron-beam lithography. LAO is used to produce parallel double quantum dots. ...