Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11956

Schwarz, Ulrich ; Sturm, Evi ; Wegscheider, Werner ; Kümmler, V. ; Lell, Alfred ; Härle, Volker

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Veröffentlichungsdatum dieses Volltextes: 11 Jan 2010 13:32

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The exciton is observed in (In,Al)GaN laser diodes as resonance in the optical gain spectra and in the spectra of the carrier induced change of the refractive index. The observed instability of the exciton with respect to the free electron-hole plasma with increasing carrier densities is accompanied by a blueshift of the exciton resonance due to the quantum confined Stark shift. The experiments ...