Influence of manganese contamination on high-mobility GaAs/AlGaAs heterostructures

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11957

Wagenhuber, Klaus ; Tranitz, H.-P. ; Reinwald, Matthias ; Wegscheider, Werner

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Veröffentlichungsdatum dieses Volltextes: 11 Jan 2010 13:32

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Photoluminescence and magnetotransport measurements have been performed to assess the quality of modulation-doped GaAs/AlGaAs heterostructures. The temporal evolution of the low-temperature electron mobility of samples prepared in a molecular-beam-epitaxy chamber containing manganese as a source material was studied. Mn contamination was identified to be responsible for the reduction of the ...