Topological defects in the edge-state structure in a bilayer electron system

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11962

Deviatov, E. V. ; Dolgopolov, V. T. ; Würtz, A. ; Wixforth, A. ; Wegscheider, Werner ; Campman, K. L. ; Gossard, A. C.

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Veröffentlichungsdatum dieses Volltextes: 11 Jan 2010 13:35

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Zusammenfassung

We experimentally demonstrate formation of pointlike topological defects in the edge-state structure in the quantum Hall effect regime. By using of a selective population technique, we investigate equilibration processes between the edge states in bilayer electron structures with a high tunneling rate between layers. Unexpected flattening of the I-V curves in a perpendicular magnetic field at a ...