Nanometre spaced electrodes on a cleaved AlGaAs surface

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11963

Luber, Sebastian M. ; Strobel, Sebastian ; Tranitz, Hans-Peter ; Wegscheider, Werner ; Schuh, Dieter ; Tornow, Marc

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Veröffentlichungsdatum dieses Volltextes: 11 Jan 2010 13:35

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Zusammenfassung

We present a novel technique for fabricating nanometre spaced metal electrodes on a smooth crystal cleavage plane with precisely predetermined spacing. Our method does not require any high-resolution nanolithography tools, all lateral patterning being based on conventional optical lithography. Using molecular beam epitaxy we embedded a thin gallium arsenide (GaAs) layer in between two aluminium ...