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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-119683
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.11968
Alternative Links zum Volltext:DOI
Zusammenfassung
Scanning-gate imaging of semiconductor quantum dots (QDs) promises access to probability distributions of quantum states. It could therefore be a novel tool for designing and optimizing tailored quantum states in such systems. A detailed study of a lithographically defined semiconductor QD in the Coulomb-blockade regime is presented, making use of the scanning-gate technique at a base temperature ...
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