Growth of (Ga,Mn)As on GaAs(0 0 1) and (3 1 1)A in a high-mobility MBE system

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11979

Reinwald, Matthias ; Wurstbauer, Ursula ; Döppe, Matthias ; Kipferl, Wolfgang ; Wagenhuber, K. ; Tranitz, Hans-Peter ; Weiss, Dieter ; Wegscheider, Werner

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Veröffentlichungsdatum dieses Volltextes: 25 Jan 2010 13:04

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Zusammenfassung

We demonstrate the possibility to produce both GaAs/AlGaAs heterostructures with high electron mobilities and (Ga,Mn)As by molecular beam epitaxy (MBE) in the same growth chamber. The (Ga,Mn)As samples have been grown on (0 0 1) and (3 1 1)A GaAs substrates and show state of the art quality. Immediately after (Ga,Mn)As growth, two-dimensional electron systems have been produced which show ...