Go to content
UR Home

Microscopic analysis of optical gain in InGaN/GaN quantum wells

Witzigmann, B., Laino, V., Luisier, M., Schwarz, Ulrich, Feicht, Georg, Wegscheider, Werner, Engl, Karl, Furitsch, Michael, Leber, Andreas, Lell, Alfred and Härle, Volker (2006) Microscopic analysis of optical gain in InGaN/GaN quantum wells. Applied Physics Letters 88 (2), 021104.

[img]PDF
Download (203kB) - Repository staff only
Date of publication of this fulltext: 25 Jan 2010 13:07

at publisher (via DOI)


Abstract

A microscopic theory is used to analyze optical gain in InGaN/GaN quantum wells (QW). Experimental data are obtained from Hakki–Paoli measurements on edge-emitting lasers for different carrier densities. The simulations are based on the solution of the quantum kinetic Maxwell–Bloch equations, including many-body effects and a self-consistent treatment of piezoelectric fields. The results confirm ...

plus


Export bibliographical data



Item type:Article
Date:11 January 2006
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.2164907DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/88/021104/1Publisher
Classification:
NotationType
42.55.PxPACS
Keywords:indium compounds, gallium compounds, III-V semiconductors, quantum well lasers, semiconductor device models, carrier density
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:12177
Owner only: item control page

Downloads

Downloads per month over past year

  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons