Long range strain and electrical potential induced by single edge dislocations in GaN

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.12180

Gmeinwieser, Nikolaus ; Gottfriedsen, P. ; Schwarz, Ulrich ; Wegscheider, Werner ; Clos, R. ; Krtschil, A. ; Krost, A. ; Engl, Karl ; Weimar, A. ; Brüderl, G. ; Lell, Alfred ; Härle, Volker

PDF
(239kB) - Nur für Mitarbeiter des Archivs

Veröffentlichungsdatum dieses Volltextes: 25 Jan 2010 13:09

Alternative Links zum Volltext:DOI

Details

Bibliographische Daten exportieren

Zusammenfassung

A dipole like strain state is induced by threading edge dislocations emerging at the surface of gallium nitride (GaN) bulk substrates. This local strain is calculated by means of a three-dimensional elastic deformation potential model, taking into account the free surface of the sample. The calculations are in excellent quantitative agreement with the strain state derived from line shifts of the ...