Few-electron quantum dot fabricated with layered scanning force microscope lithography

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.12185

Sigrist, Martin ; Gustavsson, S. ; Ihn, Thomas ; Ensslin, Klaus ; Driscoll, D. ; Gossard, A. C. ; Reinwald, Matthias ; Wegscheider, Werner

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Veröffentlichungsdatum dieses Volltextes: 25 Jan 2010 13:12

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Zusammenfassung

Few-electron quantum dots with integrated charge read-out have been fabricated by layered local anodic oxidation of a Ga[Al]As heterostructure and a thin Titanium top gate. The additional set of gates provided by the metallic film is used to tune the quantum dots into the few-electron regime. Current through the quantum dots and the quantum dot charge have been simultaneously measured for ...