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Few-electron quantum dot fabricated with layered scanning force microscope lithography

Sigrist, Martin, Gustavsson, S., Ihn, Thomas, Ensslin, Klaus, Driscoll, D., Gossard, A. C., Reinwald, Matthias and Wegscheider, Werner (2006) Few-electron quantum dot fabricated with layered scanning force microscope lithography. Physica E Low-dimensional Systems and Nanostructures 32 (1-2), pp. 5-8.

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Few-electron quantum dots with integrated charge read-out have been fabricated by layered local anodic oxidation of a Ga[Al]As heterostructure and a thin Titanium top gate. The additional set of gates provided by the metallic film is used to tune the quantum dots into the few-electron regime. Current through the quantum dots and the quantum dot charge have been simultaneously measured for ...


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Item type:Article
Date:May 2006
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
73.23.Hk; 73.63.Kv; 73.21.LaPACS
Keywords:Few-electron quantum dot; Layered lithography; Scanning force microscope
Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Item ID:12185
Owner only: item control page


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