Magnetoresistance oscillations in GaAs/AlGaAs superlattices subject to in-plane magnetic fields

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.12197

Smrčka, L. ; Vašek, P. ; Svoboda, P. ; Gonharuk, N. A. ; Pacherová, O. ; Krupko, Yu. ; Sheikin, Y. ; Wegscheider, Werner

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Veröffentlichungsdatum dieses Volltextes: 25 Jan 2010 13:21

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Zusammenfassung

The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D→2D transition under the influence of the in-plane component of an applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interpreted in terms of a simple tight-binding model. The data provide values of basic parameters of the model and make it possible to ...