Illumination-induced changes of the Fermi surface topology in three-dimensional superlattices

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.12477

Goncharuk, N. A. ; Smrčka, L. ; Svoboda, P. ; Vašek, P. ; Kučera, J. ; Krupko, Yu ; Wegscheider, Werner

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Veröffentlichungsdatum dieses Volltextes: 25 Jan 2010 13:49

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The magnetoresistance of the molecular beam epitaxy grown GaAs∕Al0.3Ga0.7As superlattice with Si-doped barriers has been measured in tilted magnetic fields in the as-grown state and after brief illumination by a red-light diode at low temperature, T≈0.3 K. A remarkable illumination-induced modification of magnetoresistance curves has been observed, which indicates a significant change of the ...