PDF (987kB) - Repository staff only |
- DOI to cite this document:
- 10.5283/epub.12477
Abstract
The magnetoresistance of the molecular beam epitaxy grown GaAs∕Al0.3Ga0.7As superlattice with Si-doped barriers has been measured in tilted magnetic fields in the as-grown state and after brief illumination by a red-light diode at low temperature, T≈0.3 K. A remarkable illumination-induced modification of magnetoresistance curves has been observed, which indicates a significant change of the ...
Owner only: item control page