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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-124932
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.12493
Alternative Links zum Volltext:DOI
Zusammenfassung
We discuss the results of our experiments on tunnel devices based on (Ga,Mn)As structures. Those include p+-(Ga, Mn)As/n+-GaAs Esaki diodes and laterally defined narrow nanoconstrictions in (Ga,Mn)As epilayers. We found in those structures strong anisotropic magnetoresistance behaviour with features that could be attributed to the novel tunnelling anisotropic magnetoresistance effect. We argue ...
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