TAMR effect in (Ga,Mn)As-based tunnel structures

URN to cite this document:: urn:nbn:de:bvb:355-epub-124932
DOI to cite this document:: 10.5283/epub.12493

Ciorga, Mariusz ; Schlapps, Markus ; Einwanger, Andreas ; Geißler, Stefan ; Sadowski, Janusz ; Wegscheider, Werner ; Weiss, Dieter

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Date of publication of this fulltext: 25 Jan 2010 13:55

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Abstract

We discuss the results of our experiments on tunnel devices based on (Ga,Mn)As structures. Those include p+-(Ga, Mn)As/n+-GaAs Esaki diodes and laterally defined narrow nanoconstrictions in (Ga,Mn)As epilayers. We found in those structures strong anisotropic magnetoresistance behaviour with features that could be attributed to the novel tunnelling anisotropic magnetoresistance effect. We argue ...