Ciorga, Mariusz, Schlapps, Markus, Einwanger, Andreas, Geißler, Stefan, Sadowski, Janusz, Wegscheider, Werner and Weiss, Dieter
(2007)
TAMR effect in (Ga,Mn)As-based tunnel structures.
New Journal of Physics 9, p. 351.
Date of publication of this fulltext: 25 Jan 2010 13:55at publisher (via DOI)
Abstract
We discuss the results of our experiments on tunnel devices based on (Ga,Mn)As structures. Those include p+-(Ga, Mn)As/n+-GaAs Esaki diodes and laterally defined narrow nanoconstrictions in (Ga,Mn)As epilayers. We found in those structures strong anisotropic magnetoresistance behaviour with features that could be attributed to the novel tunnelling anisotropic magnetoresistance effect. We argue ...
Abstract
We discuss the results of our experiments on tunnel devices based on (Ga,Mn)As structures. Those include p+-(Ga, Mn)As/n+-GaAs Esaki diodes and laterally defined narrow nanoconstrictions in (Ga,Mn)As epilayers. We found in those structures strong anisotropic magnetoresistance behaviour with features that could be attributed to the novel tunnelling anisotropic magnetoresistance effect. We argue however, that in case of nanoconstricted (Ga,Mn)As wires, some other physics has to be additionally employed to fully explain the observed effects.
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