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TAMR effect in (Ga,Mn)As-based tunnel structures

Ciorga, Mariusz, Schlapps, Markus, Einwanger, Andreas, Geißler, Stefan, Sadowski, Janusz, Wegscheider, Werner and Weiss, Dieter (2007) TAMR effect in (Ga,Mn)As-based tunnel structures. New Journal of Physics 9, p. 351.

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Abstract

We discuss the results of our experiments on tunnel devices based on (Ga,Mn)As structures. Those include p+-(Ga, Mn)As/n+-GaAs Esaki diodes and laterally defined narrow nanoconstrictions in (Ga,Mn)As epilayers. We found in those structures strong anisotropic magnetoresistance behaviour with features that could be attributed to the novel tunnelling anisotropic magnetoresistance effect. We argue ...

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Item type:Article
Date:28 September 2007
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1088/1367-2630/9/9/349DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:12493
Owner only: item control page

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