Cryogenic amplifier for fast real-time detection of single-electron tunneling

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.12495

Vink, I. T. ; Nooitgedagt, T. ; Schouten, R. N. ; Vandersypen, L. M. K. ; Wegscheider, Werner

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Veröffentlichungsdatum dieses Volltextes: 25 Jan 2010 13:58

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The authors employ a cryogenic high electron mobility transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1 K and the circuit has a bandwidth of 1 MHz. The noise contribution of the HEMT at high frequencies is only a few times higher than that of the QPC shot noise. The authors use this ...