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Hole-density dependence of the cyclotron mass of 2D holes in a GaAs(001) quantum well

Khannanov, M. N. ; Kukushkin, I. V. ; Gubarev, S. I. ; Smet, J. H. ; Klitzing, Klaus von ; Wegscheider, Werner ; Gerl, Christian
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Date of publication of this fulltext: 25 Jan 2010 13:57


Abstract

The dependence of the heavy-hole cyclotron mass in GaAs(001) quantum wells on the 2D-hole density has been measured by the optical detection method for resonance microwave by-absorption. A significant increase (almost doubling) has been observed in the cyclotron mass of heavy holes with an increase in the charge carrier density from 1.2 × 1010 cm−2 to 1.3 × 1011 cm−2.


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