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Hole-density dependence of the cyclotron mass of 2D holes in a GaAs(001) quantum well
Khannanov, M. N., Kukushkin, I. V., Gubarev, S. I., Smet, J. H., Klitzing, Klaus von, Wegscheider, Werner and Gerl, Christian (2007) Hole-density dependence of the cyclotron mass of 2D holes in a GaAs(001) quantum well. JETP Letters 85 (5), pp. 242-245.Date of publication of this fulltext: 25 Jan 2010 13:57
Article
DOI to cite this document: 10.5283/epub.12497
Abstract
The dependence of the heavy-hole cyclotron mass in GaAs(001) quantum wells on the 2D-hole density has been measured by the optical detection method for resonance microwave by-absorption. A significant increase (almost doubling) has been observed in the cyclotron mass of heavy holes with an increase in the charge carrier density from 1.2 x 10(10) cm(-2) to 1.3 x 10(11) cm(-2).
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| Item type | Article | ||||
| Journal or Publication Title | JETP Letters | ||||
| Publisher: | MAIK NAUKA/INTERPERIODICA/SPRINGER | ||||
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| Place of Publication: | NEW YORK | ||||
| Volume: | 85 | ||||
| Number of Issue or Book Chapter: | 5 | ||||
| Page Range: | pp. 242-245 | ||||
| Date | May 2007 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider | ||||
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| Keywords | ELECTRON-GAS; RESONANCE; SEMICONDUCTORS; GAAS; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Unknown | ||||
| Created at the University of Regensburg | Unknown | ||||
| Item ID | 12497 |
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