Go to content
UR Home

Hole-density dependence of the cyclotron mass of 2D holes in a GaAs(001) quantum well

DOI to cite this document:
Khannanov, M. N. ; Kukushkin, I. V. ; Gubarev, S. I. ; Smet, J. H. ; Klitzing, Klaus von ; Wegscheider, Werner ; Gerl, Christian
(186kB) - Repository staff only
Date of publication of this fulltext: 25 Jan 2010 13:57


The dependence of the heavy-hole cyclotron mass in GaAs(001) quantum wells on the 2D-hole density has been measured by the optical detection method for resonance microwave by-absorption. A significant increase (almost doubling) has been observed in the cyclotron mass of heavy holes with an increase in the charge carrier density from 1.2 × 1010 cm−2 to 1.3 × 1011 cm−2.

Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons