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Dependence of spin dephasing on initial spin polarization in a high-mobility two-dimensional electron system
Stich, Dominik, Zhou, J., Korn, Tobias
, Schulz, Robert, Schuh, Dieter, Wegscheider, Werner, Wu, M. W. und Schüller, Christian
(2007)
Dependence of spin dephasing on initial spin polarization in a high-mobility two-dimensional electron system.
Physical Review B 76 (20), S. 205301.
Veröffentlichungsdatum dieses Volltextes: 25 Jan 2010 13:58
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.12499
Zusammenfassung
We have studied the spin dynamics of a high-mobility two-dimensional electron system in a GaAs/Al(0.3)Ga(0.7)As single quantum well by time-resolved Faraday rotation and time-resolved Kerr rotation in dependence on the initial degree of spin polarization, P, of the electrons. By increasing the initial spin polarization from the low-P regime to a significant P of several percent, we find that the ...
We have studied the spin dynamics of a high-mobility two-dimensional electron system in a GaAs/Al(0.3)Ga(0.7)As single quantum well by time-resolved Faraday rotation and time-resolved Kerr rotation in dependence on the initial degree of spin polarization, P, of the electrons. By increasing the initial spin polarization from the low-P regime to a significant P of several percent, we find that the spin dephasing time, T(2)(*), increases from about 20 to 200 ps. Moreover, T(2)(*) increases with temperature at small spin polarization but decreases with temperature at large spin polarization. All these features are in good agreement with theoretical predictions by Weng and Wu [Phys. Rev. B 68, 075312 (2003)]. Measurements as a function of spin polarization at fixed electron density are performed to further confirm the theory. A fully microscopic calculation is performed by setting up and numerically solving the kinetic spin Bloch equations, including the D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms, with all the scattering explicitly included. We reproduce all principal features of the experiments, i.e., a dramatic decrease of spin dephasing with increasing P and the temperature dependences at different spin polarizations.
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Details
| Dokumentenart | Artikel | ||||
| Titel eines Journals oder einer Zeitschrift | Physical Review B | ||||
| Verlag: | AMER PHYSICAL SOC | ||||
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| Ort der Veröffentlichung: | COLLEGE PK | ||||
| Band: | 76 | ||||
| Nummer des Zeitschriftenheftes oder des Kapitels: | 20 | ||||
| Seitenbereich: | S. 205301 | ||||
| Datum | 1 November 2007 | ||||
| Institutionen | Physik > Institut für Experimentelle und Angewandte Physik | ||||
| Identifikationsnummer |
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| Klassifikation |
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| Stichwörter / Keywords | GAAS(110) QUANTUM-WELLS; RELAXATION; SEMICONDUCTORS; MECHANISM; GAAS; | ||||
| Dewey-Dezimal-Klassifikation | 500 Naturwissenschaften und Mathematik > 530 Physik | ||||
| Status | Veröffentlicht | ||||
| Begutachtet | Unbekannt / Keine Angabe | ||||
| An der Universität Regensburg entstanden | Unbekannt / Keine Angabe | ||||
| Dokumenten-ID | 12499 |
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