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Transport properties in n-type AlGaN/AlN/GaN-superlattices

DOI to cite this document:
Hertkorn, J. ; Brückner, P. ; Gao, C. ; Scholz, Ferdinand ; Chuvilin, A. ; Kaiser, U. ; Wurstbauer, Ursula ; Wegscheider, Werner
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Date of publication of this fulltext: 25 Jan 2010 14:01


In order to improve the lateral conductivity in optoelectronic devices, we have investigated Si-doped AlGaN/AlN/GaN-superlattices. As a first step we performed calculations of the band structure of Al-GaN/AlN/GaN modulation doped multi heterostructures. Based on these results we worked on optimizing the growth of low Al content (xAl 20%) superlattices by MOVPE. Several tens of abrupt and graded ...


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