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- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.12505
Alternative Links zum Volltext:DOI
Zusammenfassung
The angle-dependent behavior of the magneto-resistance of a series of low-temperature molecular beam epitaxy grown Ga(0.98)Mn(0.02)As samples on (311)A-GaAs-substrates is studied. The samples are annealed at different temperatures in a range from 300 degrees C to 500 degrees C, which leads to a redistribution of the manganese in the sample and finally to the formation of MnAs clusters. As a ...
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