Annealing-induced transition from a (311)A-oriented Ga0.98Mn0.02As alloy to a GaMnAs/MnAs hybrid structure studied by angle-dependent magnetotransport

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.12505

Elm, M. T. ; Klar, P. J. ; Heimbrodt, W. ; Wurstbauer, Ursula ; Reinwald, Matthias ; Wegscheider, Werner

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Veröffentlichungsdatum dieses Volltextes: 25 Jan 2010 14:02

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Zusammenfassung

The angle-dependent behavior of the magneto-resistance of a series of low-temperature molecular beam epitaxy grown Ga0.98Mn0.02As samples on (311)A-GaAs-substrates is studied. The samples are annealed at different temperatures in a range from 300 °C to 500 °C, which leads to a redistribution of the manganese in the sample and finally to the formation of MnAs clusters. As a consequence, the ...