A comparison: 2D electron- and hole systems in the fractional quantum Hall regime

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.12626

Hadzibrahimovic, Adriana ; Dethlefsen, Annelene F. ; Reuter, Dirk ; Wieck, Andreas D. ; Tranitz, Hans-Peter ; Wegscheider, Werner ; Haug, Rolf J.

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Veröffentlichungsdatum dieses Volltextes: 01 Feb 2010 12:59

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We investigated two-dimensional electron- (2DES) and hole systems (2DHS) in the fractional quantum Hall regime for filling factors ν=1/3 and ν=2/3. Due to a metallic top gate we are able to vary the electron-/hole density of the samples over a wide range. Measuring activated transport on these systems with perpendicular magnetic fields up to 18 T and temperatures down to about 30 mK allows to get ...