Optically induced charge transport through submicron channels

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.12630

Hof, Klaus-Dieter ; Rossler, Clemens ; Wegscheider, Werner ; Ludwig, Stefan ; Holleitner, Alexander W.

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Veröffentlichungsdatum dieses Volltextes: 01 Feb 2010 13:02

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Zusammenfassung

We report on optically induced charge transport measurements through conducting submicron channels in AlGaAs/GaAs heterostructures. The channels are defined within a two-dimensional electron gas in a quantum well by chemical etching. By applying a voltage to a top gate, the channels can be depleted electrostatically. We present two different heterostructure designs and two processing techniques ...