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Ferromagnetic GaMnAs grown on (110) faced GaAs

DOI to cite this document:
10.5283/epub.12636
Wurstbauer, Ursula ; Sperl, Matthias ; Soda, Marcello ; Neumaier, Daniel ; Schuh, Dieter ; Bayreuther, Günther ; Zweck, Josef ; Wegscheider, Werner
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Date of publication of this fulltext: 01 Feb 2010 13:07


Abstract

Thin Ga(0.94)Mn(0.06)As layers have been grown by low temperature molecular beam epitaxy on (110) GaAs substrates and on [110] and [-110] oriented GaAs cleaved edges. The Curie temperatures T(C) for the as-grown samples ranges from 46 to 80 K. After annealing at low temperatures T(C) increases up to 115 K. In addition, magnetic anisotropies determined by superconducting quantum interference ...

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