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- DOI to cite this document:
- 10.5283/epub.12636
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Abstract
Thin Ga(0.94)Mn(0.06)As layers have been grown by low temperature molecular beam epitaxy on (110) GaAs substrates and on [110] and [-110] oriented GaAs cleaved edges. The Curie temperatures T(C) for the as-grown samples ranges from 46 to 80 K. After annealing at low temperatures T(C) increases up to 115 K. In addition, magnetic anisotropies determined by superconducting quantum interference ...

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