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Ferromagnetic GaMnAs grown on (110) faced GaAs

DOI to cite this document:
Wurstbauer, Ursula ; Sperl, Matthias ; Soda, Marcello ; Neumaier, Daniel ; Schuh, Dieter ; Bayreuther, Günther ; Zweck, Josef ; Wegscheider, Werner
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Date of publication of this fulltext: 01 Feb 2010 13:07


Thin Ga0.94Mn0.06As layers have been grown by low temperature molecular beam epitaxy on (110) GaAs substrates and on [110] and [−110] oriented GaAs cleaved edges. The Curie temperatures TC for the as-grown samples ranges from 46 to 80 K. After annealing at low temperatures TC increases up to 115 K. In addition, magnetic anisotropies determined by superconducting quantum interference device magnetometry and magnetotransport measurements are reported.

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