Wurstbauer, Ursula, Sperl, Matthias, Soda, Marcello, Neumaier, Daniel, Schuh, Dieter, Bayreuther, Günther, Zweck, Josef and Wegscheider, Werner
(2008)
Ferromagnetic GaMnAs grown on (110) faced GaAs.
Applied Physics Letters 92 (10), p. 102506.
Date of publication of this fulltext: 01 Feb 2010 13:07at publisher (via DOI)
Abstract
Thin Ga0.94Mn0.06As layers have been grown by low temperature molecular beam epitaxy on (110) GaAs substrates and on [110] and [−110] oriented GaAs cleaved edges. The Curie temperatures TC for the as-grown samples ranges from 46 to 80 K. After annealing at low temperatures TC increases up to 115 K. In addition, magnetic anisotropies determined by superconducting quantum interference device magnetometry and magnetotransport measurements are reported.
Export bibliographical data
| Item type: | Article |
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| Date: | 11 March 2008 |
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| Institutions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
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| Identification Number: | | Value | Type |
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| 10.1063/1.2884683 | DOI |
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| Related URLs: | |
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| Classification: | | Notation | Type |
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| 81.05.Ea; 81.15.Hi; 68.55.ag; 75.50.Pp; 75.50.Dd; 73.61.Ey | PACS |
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| Keywords: | annealing, Curie temperature, ferromagnetic materials, gallium arsenide, galvanomagnetic effects, III-V semiconductors, magnetic anisotropy, magnetic epitaxial layers, manganese compounds, molecular beam epitaxial growth, semiconductor epitaxial layers, semiconductor growth, semimagnetic semiconductors |
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| Dewey Decimal Classification: | 500 Science > 530 Physics |
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| Status: | Published |
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| Refereed: | Unknown |
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| Created at the University of Regensburg: | Unknown |
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| Item ID: | 12636 |
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