Ultrafast optical studies of diffusion barriers between ferromagnetic Ga(Mn)As layers and non-magnetic quantum wells

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.12641

Schulz, Robert ; Korn, Tobias ; Stich, Dominik ; Wurstbauer, Ursula ; Schuh, Dieter ; Wegscheider, Werner ; Schüller, Christian

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Veröffentlichungsdatum dieses Volltextes: 01 Feb 2010 13:11

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Zusammenfassung

In recent years, ferromagnetic Ga(Mn)As has emerged as a highly interesting material for semiconductor spintronics. One possible application is to use Ga(Mn)As as an injector layer to inject spin-polarized carriers into a non-magnetic semiconductor heterostructure. As Ga(Mn)As layers are typically grown at much lower substrate temperatures than high-mobility GaAs heterostructures, a combination ...