Growth and subband structure determination of high mobility hole gases on (0 0 1) and (1 1 0) GaAs

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.12746

Gerl, Christian ; Bauer, J. ; Wegscheider, Werner

PDF
(216kB) - Nur für Mitarbeiter des Archivs

Veröffentlichungsdatum dieses Volltextes: 08 Feb 2010 13:24

Alternative Links zum Volltext:DOI

Details

Bibliographische Daten exportieren

Zusammenfassung

We introduce high mobility two-dimensional hole systems (2DHSs) in AlGaAs/GaAs heterosystems grown by molecular beam epitaxy (MBE). Utilizing a carbon filament source, two-dimensional hole gases (2DHGs) were fabricated on the (0 0 1) and (1 1 0) crystal plan. These samples exhibit low-temperature mobilities beyond 106 cm2/V s at densities varying from 0.6 to 2.3×1011 cm−2. In order to explore the ...