Fabrication of single crystal GaAs(001) barriers for magnetic tunnel junctions

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.12752

Kreuzer, Stephan ; Wegscheider, Werner ; Weiss, Dieter

PDF
(165kB) - Nur für Mitarbeiter des Archivs

Veröffentlichungsdatum dieses Volltextes: 08 Feb 2010 13:29

Alternative Links zum Volltext:DOI

Details

Bibliographische Daten exportieren

Zusammenfassung

A preparation method for magnetic tunnel junctions with single crystal GaAs(001) barriers is demonstrated. The method is based on an epoxy bond and stop etch technique and does not require epitaxial growth of a semiconductor on top of a metal. Stable GaAs tunnel barriers down to 6 nm in thickness were prepared. The I–V measurements show a pronounced nonlinearity. Their variation with temperature ...