Go to content
UR Home

New relaxation mechanism in short period strained-layer superlattices

Wegscheider, Werner ; Eberl, Karl ; Abstreiter, Gerhard ; Cerva, Hans ; Oppolzer, Helmut


High quality Si/Ge strained-layer superlattices composed of a sequence of alternating 3 monolayers pure Si and 9 monolayers pure Ge have been grown by molecular beam epitaxy at 310 0 C on Ge(001) substrates. In order to investigate the transition from coherent to incoherent growth in these tensily strained structures a set of samples with varying number of superlattice periods has been studied by ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons