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New relaxation mechanism in short period strained-layer superlattices

Wegscheider, Werner ; Eberl, Karl ; Abstreiter, Gerhard ; Cerva, Hans ; Oppolzer, Helmut


Abstract

High quality Si/Ge strained-layer superlattices composed of a sequence of alternating 3 monolayers pure Si and 9 monolayers pure Ge have been grown by molecular beam epitaxy at 310 0 C on Ge(001) substrates. In order to investigate the transition from coherent to incoherent growth in these tensily strained structures a set of samples with varying number of superlattice periods has been studied by ...

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