Go to content
UR Home

New relaxation mechanism in short period strained-layer superlattices

Wegscheider, Werner, Eberl, Karl, Abstreiter, Gerhard, Cerva, Hans and Oppolzer, Helmut (1990) New relaxation mechanism in short period strained-layer superlattices. In: Sinclair, Robert, (ed.) High resolution electron microscopy of defects in materials: symposium held April 16.-18., 1990, San Francisco, California, USA. Materials Research Society symposium proceedings, 183. Materials Research Society, Pittsburgh, Pennsylvania, USA, p. 155. ISBN 1-558-99072-0.

Full text not available from this repository.


High quality Si/Ge strained-layer superlattices composed of a sequence of alternating 3 monolayers pure Si and 9 monolayers pure Ge have been grown by molecular beam epitaxy at 310 0 C on Ge(001) substrates. In order to investigate the transition from coherent to incoherent growth in these tensily strained structures a set of samples with varying number of superlattice periods has been studied by ...


Export bibliographical data

Item type:Book section
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Item ID:13196
Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons