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Electronic properties of AFM-defined semiconductor nanostructures

Lüscher, Silvia, Held, Ryan, Fuhrer, Andreas, Heinzel, Thomas, Ensslin, Klaus, Bichler, Max and Wegscheider, Werner (2001) Electronic properties of AFM-defined semiconductor nanostructures. Materials Science and Engineering C 15 (1-2), pp. 153-157.

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The quest for even smaller and better-controlled semiconductor nanostructures calls for improved nanofabrication techniques. We succeeded in patterning metallic and semiconducting nanostructures by using local oxidation-mediated via a voltage between a conducting surface and a close-by tip of an atomic force microscope (AFM). In particular, we were able to control the electronic properties of ...


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Item type:Article
Date:20 August 2001
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
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Keywords:Semiconductor nanostructures; Nanofabrication
Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Item ID:13198
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