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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-136179
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.13617
Zusammenfassung
Manganese modulation-doped two-dimensional hole systems confined in strained InAs/InGaAs/InAlAs heterostructures were investigated by low-temperature magnetotransport experiments. The study demonstrates quantized transport phenomena in the high field region, weak anti-localization in the low-field region and ferromagnetic ordering in the separated and insulating manganese-doped layer. A ...
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