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Strong localization effect in magnetic two-dimensional hole systems

Wurstbauer, Ursula ; Knott, S. ; Zolotaryov, A. ; Schuh, Dieter ; Hansen, W. ; Wegscheider, Werner



Abstract

We report an extensive study of the magnetotransport properties of magnetically doped two-dimensional hole systems. Inverted manganese modulation doped InAs quantum wells with localized manganese ions providing a magnetic moment of S = 5/2 were grown by molecular beam epitaxy. Strong localization effect found in low-field magnetotransport measurements on these structures can either be modified by ...

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